Epitaxial growth of In2Se3 on monolayer transition metal dichalcogenide single crystals for high performance photodetectors

Pranab K. Mohapatra; K. Ranganathan; Lital Dezanashvili; Lothar Houben; Ariel Ismach

doi:10.1016/j.apmt.2020.100734

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Epitaxial growth of In2Se3 on monolayer transition metal dichalcogenide single crystals for high performance photodetectors

Pranab K. Mohapatra K. Ranganathan Lital Dezanashvili Lothar Houben Ariel Ismach

Year: 2020 Journal: Applied Materials Today Vol: 20 Pages: 100734-100734 Publisher: Elsevier BV

DOI: 10.1016/j.apmt.2020.100734

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Keywords:

Monolayer Materials science van der Waals force High-resolution transmission electron microscopy Chemical vapor deposition Heterojunction Epitaxy Crystallinity Optoelectronics Thin film Selected area diffraction Transition metal Nanotechnology Crystal (programming language) Indium Transmission electron microscopy Layer (electronics) Chemistry Molecule Composite material

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Epitaxial growth of In2Se3 on monolayer transition metal dichalcogenide single crystals for high performance photodetectors

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