Fabrication and Characterization of SnO₂/CH₃NH₃PbI₃ based Photodetector

Abstract

In this paper, we report the Photodetector based on SnO 2 /CH 3 NH 3 PbI 3 based heterojunction diode on Indium doped tin oxide (ITO) substrate. The perovskite CH 3 NH 3 PbI 3 and metal oxide SnO 2 are synthesized using the sol-gel method. The synthesized metal oxide SnO 2 and perovskite CH 3 NH 3 PbI 3 characterized using X-Ray diffraction (XRD), High resolution Scanning Electron Microscope (HRSEM), UV visible and Photo luminance Spectroscopy. XRD result confirms the formation rutile tetragonal crystalline structure of SnO 2 and Tetragonal crystalline structure of perovskite CH 3 NH 3 PbI 3 , and HRSEM image shows the uniform distribution of particles. An efficient photoluminescence band is observed at ~795 nm in SnO 2 /CH 3 NH 3 PbI 3 thin films at ambient temperature when excited with 473 nm wavelength light Finally, SnO 2 /CH 3 NH 3 PbI 3 based heterojunction diode is investigated for an electrical and optical response using fabricated ITO/SnO 2 /CH 3 NH 3 PbI 3 /Ag Photodetector device.