Preface: Phys. Status Solidi C 7/1

Abstract

Abstract Symposium J of the E‐MRS 2009 Spring Meeting covered the diversity of the current nitride research ranging from optical, electrical and characterization over growth to processing and devices of nitride materials. There were many excellent talks which provided a nice spectrum about the state‐of‐the‐art of growth and devices based on InN. In an invited talk by Martin Stutzmann, Technische Universität München, the latest developments of GaN‐based sensors were discussed, especially their applications in biology. Highlights of the meeting were, on one hand, new developments of high power light emitting diodes (LEDs). These invited talks were given for UV LEDs by Asif Khan, University of South Carolina, for visible LEDs by Werner Goetz, Philips Lumileds, and for the green light emitters by Christian Wetzel, Rensselaer Polytechnic Institute. On the other hand, Adrian Avramescu, OSRAM Opto Semiconductors presented 500 nm electrically driven InGaN‐based laser diodes and demonstrated that quality improvements of InGaN quantum wells with high indium content as well as an efficient carrier injection makes it possible to achieve lasing up to a wavelength of 500 nm. Acentral contribution of the present proceedings is the Feature Article by Sandra Ruffenach et al. on recent advances in metal organic vapour phase epitaxy (MOVPE) growth of InN [1]. The symposium venue had a very pleasant surrounding and was convenient for the participants. The open atmosphere enabled a lot of detailed discussions. In the framework of European research, a major purpose of the meeting was to stimulate the generation of new projects and goals and to promote informal scientific exchange (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)