Thin Piezoelectric Films for Micromechanical Systems

Abstract

The main technological modes of producing thin piezoelectric films of aluminum nitride AlN, zinc oxide ZnO and lead zirconate titanate LZT are analyzed with the aim of their integration in devices of micromechanical systems (MEMS). It was determined that the main technological factors for producing textured ZnO and AlN films on silicon substrates of different orientations by magnetron sputtering are the substrate temperature and the working gases pressure. The crystallization features of thin films of lead zirconate titanate (LZT) deposited on Si / SiO2 / Pt substrates at low temperatures by the method of RF magnetron sputtering are studied. It was revealed that, after low-temperature deposition of LZT piezoelectric films, the pyrochlore phase with non-ferroelectric properties predominates in the structure. It was found that for the formation of the ferroelectric phase of the PZT perovskite, continuous annealing at relatively high temperatures is required.