Theoretical study of electronic properties of nitrogen doped carbon nanotubes

Abstract

Abstract In this work, we have studied the effects of nitrogen (N) substitutional doping on the electronical properties of single wall carbon nanotube (SWCNT). The electronic density of states (eDOS) of these nanosystems has been calculated in the framework of tight-binding calculations method. The obtained results show that the semiconducting SWCNT could be a quasi-metallic one after N-substitution. We conclude that electronic properties of the N-doped nanotubes (SWCNNT) are sensitive not only to the concentration of nitrogen atoms but also to their distribution on the nanotube surface. Our main results are discussed in the light of the experimental data.