Investigation of the Photodetector Performance Based on the Ga₂O₃/Sb₂Se₃ Heterojunction

Abstract

Abstract This work demonstrates the fabrication of the p-n heterojunction photodetector between the n-type gallium oxide (Ga 2 O 3 ) and the p-type antimony selenide (Sb 2 Se 3 ). The p-n junction exhibits a turn voltage of 0.44 V and a rectification ratio of 28.25. The responsivity and detectivity of the photodetector device are as high as 9.28 mA/W and 4.23 × 10 11 Jones at 0 V bias voltage, along with the excellent photoresponse speed (the rise/decay time of 834 μs/822 μs). Such results are mainly due to the good charge separation as a result of the formation of the built-in field. Our work provides value information on the Ga 2 O3/Sb 2 Se 3 heterojunction based photodetector and enriches the opportunities on the photonic and electronic applications.