Photoresistive Characteristics of Vertically-Aligned CNT Array

Abstract

In this work we studied effect of photoresistive sensibility of multiwalled carbon nanotubes (MWCNT), direct grown on the silicon substrate by PECVD method. It was found out that this structures is sensitive for illumination in near-IR and visible spectra (from 350 nm). Authors associate this photoresponce with generation of free carriers in conduction band of CNT array electronic band structure.