Structural and thermoelectric properties of Zr-doped TiPdSn half-Heusler compound by first-principles calculations

Wendan Zheng; Yong Lu; Yunsheng Li; Jiahua Wang; Zhi‐Ling Hou; Xiaohong Shao

doi:10.1016/j.cplett.2019.137055

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Structural and thermoelectric properties of Zr-doped TiPdSn half-Heusler compound by first-principles calculations

Wendan Zheng Yong Lu Yunsheng Li Jiahua Wang Zhi‐Ling Hou Xiaohong Shao

Year: 2020 Journal: Chemical Physics Letters Vol: 741 Pages: 137055-137055 Publisher: Elsevier BV

DOI: 10.1016/j.cplett.2019.137055

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Keywords:

Thermoelectric effect Doping Heusler compound Boltzmann constant Materials science Semiconductor Condensed matter physics Electronic structure Thermoelectric materials Thermodynamics Physics Optoelectronics

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Advanced Thermoelectric Materials and Devices

Physical Sciences → Materials Science → Materials Chemistry

Heusler alloys: electronic and magnetic properties

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Structural and thermoelectric properties of Zr-doped TiPdSn half-Heusler compound by first-principles calculations

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