InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO <sub>2</sub> as gate dielectric

Peng Cui; Jie Zhang; Meng Jia; Guangyang Lin; Lincheng Wei; Haochen Zhao; Lars Gundlach; Yuping Zeng

doi:10.35848/1347-4065/ab67de

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InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO ₂ as gate dielectric

Peng Cui Jie Zhang Meng Jia Guangyang Lin Lincheng Wei Haochen Zhao Lars Gundlach Yuping Zeng

Year: 2020 Journal: Japanese Journal of Applied Physics Vol: 59 (2)Pages: 020901-020901 Publisher: Institute of Physics

DOI: 10.35848/1347-4065/ab67de

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Abstract

Abstract In this letter, we present the electrical properties of the InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic layer-deposited ZrO 2 as the gate dielectric. The InAlN/GaN MISHEMT with an on/off current ( I on / I off ) ratio of 1.46 × 10 9 as well as a subthreshold swing of 85 mV/dec was achieved. The interface trap density ( D it ) decreased from 1.16 × 10 12 eV −1 cm −2 (at E C − E T = 0.26 eV) to 4.68 × 10 11 eV −1 cm −2 (at E C − E T = 0.40 eV), indicating a good interface property. This study suggests a feasible way for the application of ZrO 2 /InAlN/GaN MISHEMTs.

Keywords:

Materials science Optoelectronics Induced high electron mobility transistor Transistor Dielectric Insulator (electricity) Semiconductor Layer (electronics) Plasma High-κ dielectric High-electron-mobility transistor MISFET Electron mobility Gate dielectric Nanotechnology Field-effect transistor Electrical engineering Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO ₂ as gate dielectric

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