Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates

Abstract

Ultrathin epitaxial silicon nitride films were formed on different Si(111) and SiC/Si(111) substrates by nitridation with plasma-activated nitrogen. Photoemission studies of the electronic structure of the SiN and SiCN layers were carried out using photoelectron spectroscopy. The photoemission spectra in the region of the valence band and the core levels of N 1s and Si 2p are studied with synchrotron excitation in the photon energy range of 80–770 eV. The photoelectron spectra of the Si 2p core level for SiN on Si(111) show a characteristic set of components corresponding to the formation of stoichiometric Si3N4. The positions of the intrinsic surface states for the SiN and SiCN films are determined.