In₂O₃/TiO₂ Heterostructure for Highly Responsive Low-Noise Ultraviolet Photodetector

Abstract

High-performance metal-semiconductormetal ultraviolet (UV) photodetector was fabricated based on In ₂ O ₃ /TiO ₂ heterostructure. The In ₂ O ₃ /TiO ₂ heterostructure photodetector exhibits the maximum responsivity of 799.5 A/W and Gain of 3541.8 under 280 nm wavelength of illumination at 2 V, which is eight times higher than the In ₂ O ₃ photodetector. The In ₂ O ₃ /TiO ₂ photodetector exhibited lower noise-equivalent power (5.5 × 10 ^-12 W. Hz-1/2) and higher detectivity (1.1 × 10 ¹² cm.Hz ^-1/2 W ^-1 ) as compared to In ₂ O ₃ photodetector. Flicker noise dominated the In ₂ O ₃ /TiO ₂ photodetector with a corner frequency of 9 Hz. The enhanced performance of the device is assigned to improved electron-hole dissociation efficiency in In ₂ O ₃ via electron transfer from In ₂ O ₃ to TiO ₂ . This heterostructure-based photodetector with improved performance can pave the way for efficient UV photodetection applications.