JOURNAL ARTICLE

Pressure-Induced Ultra-Broad-Band Emission of a Cs2AgBiBr6 Perovskite Thin Film

Abstract

Lead halide perovskites have recently emerged as promising materials for various optoelectronic applications. However, realizing lead-free and stable perovskites with broad-band emission for the fabrication of single-component light emitters in lighting applications remains a great challenge. Here, we report an intriguing pressure-induced ultra-broad-band emission ranging from 520 to 1000 nm in lead-free Cs2AgBiBr6 thin films for the first time. The broad emission arises from self-trapped excitons associated with the large lattice distortion of an octahedron resulting from a structural phase transition under high pressure. More importantly, such broad emission is retainable upon decompression. These findings offer a new route for extending the emission spectral coverage of perovskite materials for potential lighting applications in next-generation broad-band emitters.

Keywords:
Perovskite (structure) Broad band Materials science Halide Optoelectronics Exciton Thin film Fabrication Octahedron Nanotechnology Optics Crystal structure Chemistry Condensed matter physics Crystallography Physics

Metrics

34
Cited By
2.16
FWCI (Field Weighted Citation Impact)
53
Refs
0.89
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Perovskite Materials and Applications
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Optical properties and cooling technologies in crystalline materials
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Solid-state spectroscopy and crystallography
Physical Sciences →  Materials Science →  Materials Chemistry

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JOURNAL ARTICLE

High‐Pressure Band‐Gap Engineering in Lead‐Free Cs2AgBiBr6 Double Perovskite

Qian LiYonggang WangWeicheng PanWenge YangBo ZouJiang TangZewei Quan

Journal:   Angewandte Chemie International Edition Year: 2017 Vol: 56 (50)Pages: 15969-15973
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