Sensitive field-effect transistor sensors with atomically thin black phosphorus nanosheets

Arnab Maity; Xiaoyu Sui; Hongting Pu; Kai J. Bottum; Bing Jin; Jingbo Chang; Guihua Zhou; Ganhua Lu; Junhong Chen

doi:10.1039/c9nr09354k

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Sensitive field-effect transistor sensors with atomically thin black phosphorus nanosheets

Arnab Maity Xiaoyu Sui Hongting Pu Kai J. Bottum Bing Jin Jingbo Chang Guihua Zhou Ganhua Lu Junhong Chen

Year: 2019 Journal: Nanoscale Vol: 12 (3)Pages: 1500-1512 Publisher: Royal Society of Chemistry

DOI: 10.1039/c9nr09354k

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Abstract

Atomically thin black phosphorus (BP) field-effect transistors have excellent potential for sensing applications.

Keywords:

Black phosphorus Materials science Field-effect transistor Transistor Optoelectronics Nanotechnology Thin-film transistor Field (mathematics) Field effect Electrical engineering Engineering Layer (electronics) Voltage

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Sensitive field-effect transistor sensors with atomically thin black phosphorus nanosheets

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