Electrical and Optical Characteristics of Two-Dimensional MoS₂ Film Grown by Metal-Organic Chemical Vapor Deposition

Abstract

Atomically thin molybdenum disulfide (MoS 2 ) films were synthesized on a SiO 2 /Si substrate by metal-organic chemical vapor deposition (MOCVD). Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy studies reveal the double-atomic-layer structure and the surface element composition of the MOCVD-grown MoS 2 films. The photoluminescence measurement demonstrates a strong emission peak with a bandgap of 685.1 nm, attributed to highly efficient radiative transition at the double atomic layer. The contact resistance between the doubleatomic-layer MoS 2 film and metal electrode was measured using the transmission-line modeling method. A Ti/Au electrode forms an ohmic contact with the double-atomic-layer MOCVD-grown MoS 2 film, exhibiting a resistivity of 100 kΩ. The field-effect transistor based on the double-atomiclayer MoS 2 film exhibits an electron mobility of 1.3×10 −4 cm 2 /V·s and an on/off ratio of 6.5×10 2 at room temperature.