High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

Abstract

Schottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm ^-2 with the on/off ratio higher than 10 ⁸ . Ideality factor and barrier height for Pt metal on the boron-doped diamond are evaluated to be 1.07 and 1.38 eV, respectively. Drain current maximum for the MESFET is -0.55mA mm ^-1 , which is nine times higher than that of the previous report. Origin of it is possibly attributed to the good surface quality and high boron concentration for the B-diamond.