High-rate deposition of silicon nitride thin films using plasma-assisted reactive sputter deposition

Kosuke Takenaka; Yuichi Setsuhara; Jeon G. Han; Giichiro Uchida; Akinori Ebe

doi:10.1016/j.tsf.2019.06.049

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High-rate deposition of silicon nitride thin films using plasma-assisted reactive sputter deposition

Kosuke Takenaka Yuichi Setsuhara Jeon G. Han Giichiro Uchida Akinori Ebe

Year: 2019 Journal: Thin Solid Films Vol: 685 Pages: 306-311 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2019.06.049

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Keywords:

Sputtering Passivation Thin film Materials science Deposition (geology) Silicon nitride Plasma Sputter deposition Optoelectronics Nitride Partial pressure Silicon Nanotechnology Layer (electronics) Chemistry Oxygen Organic chemistry

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

High-rate deposition of silicon nitride thin films using plasma-assisted reactive sputter deposition

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