K. BinodIain W. H. OswaldJiakui K. WangGregory T. McCandlessJulia Y. ChanE. Morosan
Abstract Single crystals of Lu 3 T 4 Ge 13‐x (T: Co, Rh, Os) and Y 3 T 4 Ge 13‐x (T: Ir, Rh, Os) are grown by a self‐flux method from mixtures of the elements in ratios of Lu(Y):T:Ge of 2:3:25 or 1:1:20 (1000‐1200 °C; slow cooling to 820‐960 °C) followed by decanting the surplus Ge flux.
K. BinodIain W. H. OswaldJiakui K. WangGregory T. McCandlessJulia Y. ChanE. Morosan
Om PrakashA. ThamizhavelS. Ramakrishnan
Om PrakashA ThamizhavelS Ramakrishnan
Om PrakashA. ThamizhavelS. Ramakrishnan
Frederick W. B. EinsteinVictor J. JohnstonK. AndrewRoland K. Pomeroy