ChemInform Abstract: Anodic Oxidation of Hydrogenated Amorphous Silicon and Properties of Oxide.

Abstract

Abstract It is shown that uniform amorphous SiO 2 layers of up to 2500 Å thickness can be grown on hydrogenated amorphous silicon (a‐Si:H) at room temp. by anodic oxidation in an ethylene glycol solution of KNO 3 at a rate of 5.5 Å/V. The process is stable, reproducible, and electrically controllable.