Electrical and sensory properties of zinc oxide – porous silicon nanosystems

Abstract

Zinc oxide nanostructures have been grown by electrochemical deposition on porous silicon–silicon substrate. The photoelectric and sensory properties of the obtained ZnO–porous silicon nanosystems were investigated in both DC and AC regimes. The obtained structures were characterized by photosensitivity in the 400–1100 nm wavelength range and by high sensitivity to moisture. Increase of relative humidity resulted in significant decrease of the electrical resistance and increase of the capacitance of the hybrid structures. To estimate the sensory properties of the ZnO–porous silicon nanostructures their adsorption sensitivity and dynamic characteristics were analyzed. Discovered features of the charge transport processes broaden the prospects of the semiconductor nanosystems application in gas sensors and photodetectors.