Improvement of Performance of HfS2 Transistors Using a Self-Assembled Monolayer as Gate Dielectric*
Abstract
This work details a study based on HfS 2 transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer (SAM) as the gate dielectric. The fabrication of the SAM-based two-dimensional (2D) material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials. In comparison to HfS 2 transistors utilizing a conventional Al 2 O 3 gate insulator by atomic layer deposition, HfS 2 transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4V to 2V, enhance the field-effect mobility from 0.03 cm 2 /Vs to 0.75 cm 2 /Vs, improve the sub-threshold swing from 404 mV/dec to 156 mV/dec, and optimize the hysteresis to 0.03 V, thus demonstrating improved quality of the semiconductor/insulator interface .
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