High-bias negative differential resistance effect in pure, doped and co-doped carbon nanotubes connected to boron nitride nanotubes

Ankita Joshi; C. N. Ramachandran

doi:10.1016/j.physe.2019.04.021

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High-bias negative differential resistance effect in pure, doped and co-doped carbon nanotubes connected to boron nitride nanotubes

Ankita Joshi C. N. Ramachandran

Year: 2019 Journal: Physica E Low-dimensional Systems and Nanostructures Vol: 113 Pages: 1-7 Publisher: Elsevier BV

DOI: 10.1016/j.physe.2019.04.021

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Keywords:

Materials science Carbon nanotube Doping Rectification Dopant Boron nitride Nanotechnology Nanotube Band gap Optoelectronics Voltage Electrical engineering

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Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Molecular Junctions and Nanostructures

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

High-bias negative differential resistance effect in pure, doped and co-doped carbon nanotubes connected to boron nitride nanotubes

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