On Chip Optical Modulator using Epsilon-Near-Zero Hybrid Plasmonic Platform

Mohamed A. Swillam; Aya O. Zaki; Khaled Kirah; L. A. Shahada

doi:10.1038/s41598-019-42675-z

ScienceGate Book Chapters

JOURNAL ARTICLE

On Chip Optical Modulator using Epsilon-Near-Zero Hybrid Plasmonic Platform

Mohamed A. Swillam Aya O. Zaki Khaled Kirah L. A. Shahada

Year: 2019 Journal: Scientific Reports Vol: 9 (1)Pages: 6669-6669 Publisher: Nature Portfolio

DOI: 10.1038/s41598-019-42675-z

Get Full-Text PDF Get Analytical Report

Keywords:

Resonator Extinction ratio Optoelectronics Materials science Plasmon Silicon on insulator Indium tin oxide Insertion loss Tin Silicon Layer (electronics) Wavelength Nanotechnology

Metrics

Cited By

1.94

FWCI (Field Weighted Citation Impact)

Refs

0.87

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasmonic and Surface Plasmon Research

Physical Sciences → Engineering → Biomedical Engineering

Optical Network Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

On Chip Optical Modulator using Epsilon-Near-Zero Hybrid Plasmonic Platform

Metrics

Citation History

Topics

Related Documents

Hybrid plasmonic electro-optical absorption modulator based on epsilon-near-zero characteristics of ITO

Epsilon near-zero all-optical terahertz modulator

High-speed hybrid plasmonic electro-optical absorption modulator exploiting epsilon-near-zero effect in indium-tin-oxide

2D hybrid epsilon near-zero platform for nanophotonics

High-Speed Plasmonic-Silicon Modulator Driven by Epsilon-Near-zero Conductive Oxide