Temperature dependent transport properties and rectification in La_0.7Sr_0.3MnO₃/La_0.7Te_0.3MnO₃ p–n junctions

Abstract

In this work, we demonstrated the idea in a epitaxial heterostructure of La0.7Sr0.3MnO3/La0.7Te0.3MnO3 (LSMO/LTMO) which exhibited a related transition from a typical p–n junction (hole-electron) with remarkable diode effect as at low temperature to a p–p like junction (hole- small polaron) with a small rectification. Besides, the temperature dependence under positive and negative voltage bias exhibit inverse variation trends. These results are associated with the transition of major carrier with the rising temperature in LTMO. It indicates that the p–n junction with different dopping exhibit a variety of physical mechanisms for the further researches and applications.