Photoelectrochemical properties of BiVO ₄ thin films with NaOH chemical treatment

Abstract

Abstract BiVO 4 thin films were prepared by a mature and simple electrochemical deposition method on F‐doped SnO 2 substrate electrode (FTO). The influence of a chemical treatment using sodium hydroxide (NaOH) on the photoelectrochemical properties of BiVO 4 thin films was studied. It was found that NaOH can etch the crystal surface of BiVO 4 , which leads to the increase in specific surface area and improved photoelectrochemical activity. The photocurrent density of the BiVO 4 thin films showed an enhancement of photoelectronic current from 0.50 to 0.65 mA·cm −2 at 1.23 V (vs. RHE) after the treatment for 5 h by NaOH, which supplies a stronger potential for H 2 O oxidation.