Transient photoresponse of infrared photodetector based on Sb_0.1Sn_0.9Se₂ ternary alloy

Abstract

In this article, we demonstrated the growth and optoelectronic application of Sb0.1Sn0.9Se2 ternary alloy. The single crystals of Sb0.1Sn0.9Se2 ternary alloy are grown by direct vapour transport technique. The grown compound has 2H–SnSe2 type hexagonal lattice structure in which Sb+5 is well substituted on Sn+4 lattice sites. Subsequently, the photodetector is fabricated and explored under IR illumination (1088 nm) of different power intensity ranging from 1 to 80 mW cm−2 at room temperature (300 K). The detector shows excellent response with enhanced photoresponsivity of 84.22 mW A−1 and specific detectivity of 2.53 × 109 Jones. The temperature dependent photoresponse of photodetector in investigated in temperature range 210 to 300 K. The detector showed stable response in studied temperature range. The present finding on photodetector suggest the novel ternary composition for application as infrared photodetection.