Shuo ZhaoYue XuXiaochao XianNa LiuWenjing Li
The pores in silicon particles can accommodate the volume expansion of silicon during the charging–discharging process. However, pores in silicon particles are easily occupied by carbon during the preparation of silicon/carbon composites. In this paper, sulfur was adsorbed in the pores of porous silicon particles before polyaniline (PANI) coating by in-situ polymerization, so that the pores were preserved in porous silicon@carbon (p-Si/@C) composites after the sublimation of sulfur during carbonization. The microstructure and the electrochemical performances of the obtained p-Si/@C composites were investigated. The results indicate that p-Si/@C composites prepared with a sulfur-melting process show a better high-rate performance than those without a sulfur-melting process. Remarkably, the former show a better capacity retention when returning to a low current density. The reversible capacities of the former were 1178 mAh·g−1, 1055 mAh·g−1, 944 mAh·g−1, and 751 mAh·g−1 at 0.2 A·g−1, 0.3 A·g−1, 0.5 A·g−1, and 1.0 A·g−1, respectively. Moreover, the reversible capacities could return to 870 mAh·g−1, 996 mAh·g−1, and 1027 mAh·g−1 when current densities returned to 0.5, 0.3, and 0.2 A·g−1, respectively.
Shenggao WangTao WangZhong YanQuanrong DengYangwu MaoGeming Wang
Duc Tung NgoRamchandra S. KalubarmeMuralidhar ChourashiyaChoong-Nyeon ParkChan‐Jin ParkChan-Jin ParkChan-Jin Park
Hedong ChenXianhua HouLina QuHaiqing QinQiang RuYuan HuangShejun HuKwok Ho Lam
X.J. ZhangYi ZhangZhen ZhouJing WeiRachid EssehliBrahim El Bali
Xuefang ChenYing HuangJunjiao ChenXiang ZhangChao LiHaijian Huang