Enhanced Stability of Sr-Doped Aqueous In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors Under Bias/Illumination/Thermal Stress

You-Hang Zhou; Jun Li; De-Yao Zhong; Xifeng Li; Jianhua Zhang

doi:10.1109/ted.2019.2893479

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Enhanced Stability of Sr-Doped Aqueous In₂O₃ Thin-Film Transistors Under Bias/Illumination/Thermal Stress

You-Hang Zhou Jun Li De-Yao Zhong Xifeng Li Jianhua Zhang

Year: 2019 Journal: IEEE Transactions on Electron Devices Vol: 66 (3)Pages: 1308-1313 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/ted.2019.2893479

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Abstract

An aqueous solution method has been used to fabricate SrInO thin-film transistors (TFTs) in this paper. Strontium has been doped in In ₂ O ₃ as a carrier suppressor and proved to be associated with the reduction of the oxygen-related defect state. A small amount of Sr doping can effectively improve the stability of In ₂ O ₃ TFTs under bias/illumination/thermal stress. The capacitance-voltage measurement and X-ray photoelectron spectroscopy measurement are tested to observe and analyze the variation of interface defect state and oxygen vacancy. The density of states is calculated to further confirm the decrease of the total trap state with the increase of the Sr content.

Keywords:

Doping Aqueous solution Thin-film transistor Analytical Chemistry (journal) Materials science Thermal stability Optoelectronics Chemistry Physical chemistry Nanotechnology Organic chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Enhanced Stability of Sr-Doped Aqueous In₂O₃ Thin-Film Transistors Under Bias/Illumination/Thermal Stress

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