Electronic structure of amorphous Nb1-x Si x films studied by X-ray emission and X-ray photoelectron spectroscopy

K. Söldner; A. Grassmann; G. Saemann‐Ischenko; W. Zahorowski; A. Šim⫲nek; G. Wiech

doi:10.1007/bf01313568

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Electronic structure of amorphous Nb1-x Si x films studied by X-ray emission and X-ray photoelectron spectroscopy

K. Söldner A. Grassmann G. Saemann‐Ischenko W. Zahorowski A. Šim⫲nek G. Wiech

Year: 1989 Journal: The European Physical Journal B Vol: 75 (1)Pages: 59-65 Publisher: Springer Science+Business Media

DOI: 10.1007/bf01313568

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Keywords:

X-ray photoelectron spectroscopy Amorphous solid Analytical Chemistry (journal) Sputtering Binding energy Materials science Emission spectrum Spectroscopy Spectral line X-ray X-ray spectroscopy Thin film Atomic physics Crystallography Chemistry Nuclear magnetic resonance Physics Optics Nanotechnology

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Metallic Glasses and Amorphous Alloys

Physical Sciences → Engineering → Mechanical Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic structure of amorphous Nb1-x Si x films studied by X-ray emission and X-ray photoelectron spectroscopy

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