Epitaxial growth of Co2FeSi/MgO/GaAs(0 0 1) heterostructures using molecular beam epitaxy

Georg Hoffmann; B. Jenichen; J. Herfort

doi:10.1016/j.jcrysgro.2019.02.029

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Epitaxial growth of Co2FeSi/MgO/GaAs(0 0 1) heterostructures using molecular beam epitaxy

Georg Hoffmann B. Jenichen J. Herfort

Year: 2019 Journal: Journal of Crystal Growth Vol: 512 Pages: 194-197 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2019.02.029

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Keywords:

Molecular beam epitaxy Materials science Transmission electron microscopy Heterojunction Epitaxy Layer (electronics) High-resolution transmission electron microscopy Substrate (aquarium) Electron diffraction Optoelectronics Condensed matter physics Diffraction Analytical Chemistry (journal) Optics Chemistry Nanotechnology

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Heusler alloys: electronic and magnetic properties

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Magnetic properties of thin films

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Epitaxial growth of Co2FeSi/MgO/GaAs(0 0 1) heterostructures using molecular beam epitaxy

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