Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite

А. А. Шульженко; L. Jaworska; А. Н. Соколов; L. A. Romanko; V. G. Gargin; N.M. Belyavina; В. Н. Ткач; А. P. Zakora

doi:10.3103/s1063457618060102

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Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite

А. А. Шульженко L. Jaworska А. Н. Соколов L. A. Romanko V. G. Gargin N.M. Belyavina В. Н. Ткач А. P. Zakora

Year: 2018 Journal: Journal of Superhard Materials Vol: 40 (6)Pages: 435-438 Publisher: Pleiades Publishing

DOI: 10.3103/s1063457618060102

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Abstract

The influence was studied of the addition of n-layer graphene Gn(4) and silicon nanocarbide in the sintering under high pressure and temperature with the silicon impregnation of the mixture on the structure and electrophysical properties of a diamond composite.

Keywords:

Materials science Silicon carbide Composite number Diamond Silicon Sintering Composite material Graphene Layer (electronics) Nanotechnology Metallurgy

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Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Carbon Nanotubes in Composites

Physical Sciences → Materials Science → Materials Chemistry

Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite

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