Bang LiXin YanYanbin LuoQichao LuXia ZhangXiaomin Ren
In this work, we demonstrate a nanowire phototransistor with synaptic behavior. The device is based on a single crystalline InAs nanowire. The device mimics synaptic neuromorphic functions such as short-term plasticity and long-term plasticity. Moreover, these synaptic behaviors can be controlled by the application of gate voltage, that is, long-term plasticity is restrained/enhanced under the negative/positive gate bias. This synapse-like behavior of the transistor is attributed to the photogating effect.
Chao HanJiayue HanMeiyu HeXingwei HanZhiming WuHe YuJun GouJun Wang
Wen HuangHuixing ZhangZhengjian LinPengjie HangXing’ao Li
Xiaodong YanZhiren ZhengVinod K. SangwanJustin H. QianXueqiao WangStephanie E. LiuKenji WatanabeTakashi TaniguchiSu‐Yang XuPablo Jarillo‐HerreroQiong MaMark C. Hersam
Rengjian YuEnlong LiXiaomin WuYujie YanWeixin HeLihua HeJinwei ChenHuipeng ChenTailiang Guo
Langner, PhilippChiabrera, FrancescoAlayo, NereaNizet, PaulMorrone, LuigiBozal-Ginesta, CarlotaMorata, AlexTarancón, Albert