Simulation and Electrical Characterisation of P-Si/n-ZnO Based Heterojunction Diodes

Abstract

In this paper Electrical Characterisation of n-ZnO/P-Si heterojunction diode has been reported. The Structure has been designed and analysed using ATLAS of Silvaco Software. The diode parameters such as barrier height and ideality factor were determined. At the room temperature, the diode had the turn-on voltage of 0.8 V, the barrier height of 0.56 e V, ideality factor of 5.85 by I (current)-V (voltage) test derived. These electrical properties were investigated at different testing temperatures from 300°C. to 420°C. The temperature dependence in the I-V characteristics of the p-n diodes can be successfully explained.