Antimonide Based Infrared Detectors and Focal Plane Arrays

Abstract

Infrared imaging (3-25μm) has been an important technological tool for the past 60 years since the first report of infrared detectors in 1950s. There has been a dramatic progress in the development of antimonide based detectors and low power electronic devices in the past decade with new materials like InAsSb, InAs/GaSb superlattices and InAs/InAsSb superlattices demonstrating very good performance. One of the unique aspects of the 6.1A family of semiconductors (InAs, GaSb and AlSb) is the ability to engineer the bandstructure to obtain designer band-offsets. Our group recently moved to The Ohio State University where we are setting up new capability for investigation of the antimonide based materials for infrared detectors and focal plane arrays. Our two areas of focus include developing a "materials to manufacturing" capability for realization of these sensors and exploration of novel application for the infrared sensors and imagers.