Ti Film Thickness Influences on the Back Channel Etched Amorphous InGaZnO4 Thin Film Transistors
Abstract
Back channel etched (BCE) amorphous InGaZnO 4 (a-IGZO) thin film transistors are fabricated, in which Ti thin film is employed as a protective layer for a-IGZO. The optimal Ti thickness is found to be 4-5 nm, and a-IGZO will be well protected and excellent transfer curves can be obtained after O 2 plasma and annealing treatment. Besides, by the introduction of the Ti layer, the devices obtain better stress stability.
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