n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors

Bowen Shi; Yangyang Wang; Jingzhen Li; Xiuying Zhang; Jiahuan Yan; Shiqi Liu; Jie Yang; Yuanyuan Pan; Han Zhang; Jinbo Yang; Feng Pan; Jing Lü

doi:10.1039/c8cp04615h

JOURNAL ARTICLE

n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors

Bowen Shi Yangyang Wang Jingzhen Li Xiuying Zhang Jiahuan Yan Shiqi Liu Jie Yang Yuanyuan Pan Han Zhang Jinbo Yang Feng Pan Jing Lü

Year: 2018 Journal: Physical Chemistry Chemical Physics Vol: 20 (38)Pages: 24641-24651 Publisher: Royal Society of Chemistry

DOI: 10.1039/c8cp04615h

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Abstract

We explore the contact properties of monolayer InSe transistors and obtain n-type Ohmic/p-type Schottky contacts.

Keywords:

Ohmic contact Monolayer Schottky barrier Materials science Optoelectronics Transistor Type (biology) Nanotechnology Layer (electronics) Electrical engineering Engineering Biology Voltage

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors

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