Thermoelectric Transport in Doped Carbon Nanotube Films

Abstract

This paper presents a rational method for doping π-electronic materials including carbon nanotube (CNT) films, and its application in the fabrication of thermoelectric power generators. Particularly, n-type doping developed here enables the unprecedented stabilization of n-type CNTs, which is beneficial for the development of tough and flexible thermoelectric generators. At the same time, the present methodology with structure-specific CNTs is used for the investigation of thermoelectric transport in one-dimensional semiconductors.