Effect of ZnO layer thickness upon optoelectrical properties of NiO/ ZnO heterojunction prepared at room temperature

Ahmed Obaid M. Alzahrani; Mohamed Sh. Abdel-wahab; Meshari Alayash; M.S. Aïda

doi:10.1007/s10854-018-9721-9

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Effect of ZnO layer thickness upon optoelectrical properties of NiO/ ZnO heterojunction prepared at room temperature

Ahmed Obaid M. Alzahrani Mohamed Sh. Abdel-wahab Meshari Alayash M.S. Aïda

Year: 2018 Journal: Journal of Materials Science Materials in Electronics Vol: 29 (19)Pages: 16317-16324 Publisher: Springer Science+Business Media

DOI: 10.1007/s10854-018-9721-9

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Keywords:

Wurtzite crystal structure Heterojunction Materials science Non-blocking I/O Equivalent series resistance Optoelectronics Layer (electronics) Hexagonal crystal system Sputtering Thin film Zinc Voltage Nanotechnology Crystallography Metallurgy Electrical engineering Chemistry

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Effect of ZnO layer thickness upon optoelectrical properties of NiO/ ZnO heterojunction prepared at room temperature

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