Resistive switching phenomenon in graphene oxide doped with copper devices

Abstract

Non-volatile memory technology is significant in the market of electronics products. Until now, Flash memory has dominated the market of non-volatile memories, but due to its scalability problem, scientists have also been calling for new devices. Resistive random access memory ReRAM has attracted great attention due to its potential for flash memory replacement in next generation nonvolatile memory applications. This device is based on resistive switching (RS) phenomenon for operation, which is reversible and can be reversed repeatedly. In this work, device fabrication used doped graphene oxide with copper (GO + 1% Cu) and copper oxide (CuO) thin films. ITO (Indium Tin Oxide) and aluminum were used as contacts. Thin films are obtained by the dip coating technique. The mechanism of the resistive switching effect in doped graphene oxide thin film based devices has been investigated by macroscopic current-voltage (IxV) measurements. The RS originates from the formation and rupture of conducting filaments. In addition, switching effect in these study devices has a clear dependence on the electrode material. ReRAM device structures show unipolar resistive switching behavior.