NOVEL GROWTH OF ALIGNED ZINC OXIDE NANOROD ARRAYS ON Mg0.3Zn0.7O SEED LAYER AND ITS RECTIFYING BEHAVIOUR

Abstract

A novel growth of aligned zinc oxide (ZnO) nanorod arrays on Mg 0.3 Zn 0.7 O seed layer by immersion method at low temperature has been successfully demonstrated. As observed by field emission electron microscope (FESEM), the nanorod has a hexagonal structure, in vertically aligned form, with the average diameter of 70-80 nm, and the average length of 3 µm. The substrate position that floated in the ZnO solution and faced downward allowed the nanorod to grow extra-long, and its novel possible growth mechanism is discussed. Moreover, the sonication process and the seed layer used have contributed to the well aligned and highly oriented ZnO nanorods. Furthermore, the current-voltage ( I-V ) characteristics showed a strong rectifying behavior with low ideality factor and high Schottky barrier height. These results indicate that the grown nanorods can be applied to many electronic devices.