Room temperature ammonia gas sensing properties of MoS2 nanostructured thin film

Abstract

Here, we have fabricated the MoS2 nanostructure thin films on the Si (100) substrate using DC magnetron sputtering technique. The MoS2 thin film sensor shows the selective responses towards the ammonia gas (NH3) under low detection range 10-500 ppm. The sensor displays a significantly high sensing response (Rg/Ra ∼2.2) towards 100 ppm ammonia gas with a very fast response and recovery time of 22 sec and 30 sec respectively. Selectivity and stability investigations exhibit the excellent sensing properties of MoS2 thin film sensor. The working principle and sensing mechanism behind their remarkable performance was also investigated in detail.