PBTI evaluation of In<inf>0.65</inf>Ga<inf>0.35</inf>As/In<inf>0.53</inf>Ga<inf>0.47</inf>As nanowire FETs with Al<inf>2</inf>O<inf>3</inf> and LaAlO<inf>3</inf> gate dielectrics

Abstract

This paper investigates the positive bias temperature instability (PBTI) characteristics of InGaAs nanowire FETs with different channel material components and gate dielectrics by 3D-Kenetic Monte Carlo (KMC) method. It is found that PBTI becomes worse as the increase of In component due to different band line-up. Moreover, PBTI along nanowire thickness (T _nw ) and width (W _nw ) directions shows differences due to non-uniform oxide electric field. With a sandwich channel structure, comprising different InGaAs compositions, the difference between the ΔV _th of T _nw and W _nw (ΔV _th1-2 ) enlarges at high temperature. The nanowire with LaAlO ₃ dielectric shows lager PBTI effects and smaller difference between T _nw and W _nw than Al ₂ O ₃ dielectric.