Metal–semiconductor–metal ultraviolet photodiodes based on reduced graphene oxide/GaN Schottky contacts

Bhishma Pandit; Jaehee Cho

doi:10.1016/j.tsf.2018.03.035

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Metal–semiconductor–metal ultraviolet photodiodes based on reduced graphene oxide/GaN Schottky contacts

Bhishma Pandit Jaehee Cho

Year: 2018 Journal: Thin Solid Films Vol: 660 Pages: 824-827 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2018.03.035

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Keywords:

Materials science Schottky barrier Responsivity Schottky diode Photodiode Optoelectronics Graphene Oxide Semiconductor Band gap Metal–semiconductor junction Diode Fermi level Ultraviolet Wide-bandgap semiconductor Nanotechnology Photodetector Metallurgy

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Metal–semiconductor–metal ultraviolet photodiodes based on reduced graphene oxide/GaN Schottky contacts

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