Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode

M. H. Abu Bakar; Lam Mui Li; Khairul Anuar Mohamad; Fouziah Md Yassin; Chee Fuei Pien; Afishah Alias; Katsuhiro Uesugi

doi:10.1166/asl.2017.10329

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Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO₂ Transparent Heterojunction Diode

M. H. Abu Bakar Lam Mui Li Khairul Anuar Mohamad Fouziah Md Yassin Chee Fuei Pien Afishah Alias Katsuhiro Uesugi

Year: 2017 Journal: Advanced Science Letters Vol: 23 (11)Pages: 11564-11566 Publisher: American Scientific Publishers

DOI: 10.1166/asl.2017.10329

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Keywords:

Heterojunction Annealing (glass) Optoelectronics Materials science Diode Metallurgy

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Copper-based nanomaterials and applications

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO₂ Transparent Heterojunction Diode

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