Stable MoS₂ Field‐Effect Transistors Using TiO₂ Interfacial Layer at Metal/MoS₂ Contact (Phys. Status Solidi A 12∕2017)

Abstract

As the physical scaling of traditional silicon CMOS devices is gradually approaching its physical limit, molybdenum disulfide (MoS2) having a two-dimensional atomic-layered structure has attracted significant interest as a new emerging semiconductor channel material. However, relatively poor device performance and instability during device operation with MoS2 are of great concern. The bonding mismatch between different materials causes interface issue and instability. Hence, solving this interface issue between metal electrodes and MoS2 is critical. Therefore, here (article No.201700534), a thin titanium dioxide (TiO2) insulating film as a buffer layer has been sandwiched between the metal electrode (Ti) and MoS2. The TiO2 insulating film was used among the various materials since it is well-matched with both Ti and MoS2 electrically. As a result, higher performance, and longer and stable operation were observed in MoS2 based transistors.