JOURNAL ARTICLE

Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance

P. M. LenahanMark AndersRyan J. WaskiewiczAivars J. Lelis

Year: 2017 Journal:   Microelectronics Reliability Vol: 81 Pages: 1-6   Publisher: Elsevier BV
Keywords:
MOSFET Materials science Negative-bias temperature instability Optoelectronics Transistor Silicon carbide Oxide Dangling bond Substrate (aquarium) Condensed matter physics Dielectric Field-effect transistor Silicon Engineering physics Nanotechnology Electrical engineering Voltage Physics Composite material

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4
Cited By
0.40
FWCI (Field Weighted Citation Impact)
36
Refs
0.67
Citation Normalized Percentile
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Citation History

Topics

Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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