Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance

P. M. Lenahan; Mark Anders; Ryan J. Waskiewicz; Aivars J. Lelis

doi:10.1016/j.microrel.2017.12.010

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Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance

P. M. Lenahan Mark Anders Ryan J. Waskiewicz Aivars J. Lelis

Year: 2017 Journal: Microelectronics Reliability Vol: 81 Pages: 1-6 Publisher: Elsevier BV

DOI: 10.1016/j.microrel.2017.12.010

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Keywords:

MOSFET Materials science Negative-bias temperature instability Optoelectronics Transistor Silicon carbide Oxide Dangling bond Substrate (aquarium) Condensed matter physics Dielectric Field-effect transistor Silicon Engineering physics Nanotechnology Electrical engineering Voltage Physics Composite material

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance

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