High-performance self-powered deep ultraviolet photodetector based on MoS<sub>2</sub>/GaN p–n heterojunction

Ranran Zhuo; Yuange Wang; Di Wu; Zhenhua Lou; Zhifeng Shi; Tingting Xu; Junmin Xu; Yongtao Tian; Xinjian Li

doi:10.1039/c7tc04754a

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High-performance self-powered deep ultraviolet photodetector based on MoS₂/GaN p–n heterojunction

Ranran Zhuo Yuange Wang Di Wu Zhenhua Lou Zhifeng Shi Tingting Xu Junmin Xu Yongtao Tian Xinjian Li

Year: 2017 Journal: Journal of Materials Chemistry C Vol: 6 (2)Pages: 299-303 Publisher: Royal Society of Chemistry

DOI: 10.1039/c7tc04754a

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Abstract

Self-powered MoS₂/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

Keywords:

Photodetector Responsivity Materials science Heterojunction Optoelectronics Ultraviolet Sensitivity (control systems) Electronic engineering

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

High-performance self-powered deep ultraviolet photodetector based on MoS₂/GaN p–n heterojunction

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