Construction of GaN/Ga<sub>2</sub>O<sub>3</sub> p–n junction for an extremely high responsivity self-powered UV photodetector

Peigang Li; Haoze Shi; Kai Chen; Daoyou Guo; Wei Cui; Yusong Zhi; Shunli Wang; Zhenping Wu; Zhengwei Chen; Weihua Tang

doi:10.1039/c7tc03746e

ScienceGate Book Chapters

JOURNAL ARTICLE

Construction of GaN/Ga₂O₃ p–n junction for an extremely high responsivity self-powered UV photodetector

Peigang Li Haoze Shi Kai Chen Daoyou Guo Wei Cui Yusong Zhi Shunli Wang Zhenping Wu Zhengwei Chen Weihua Tang

Year: 2017 Journal: Journal of Materials Chemistry C Vol: 5 (40)Pages: 10562-10570 Publisher: Royal Society of Chemistry

DOI: 10.1039/c7tc03746e

Get Full-Text PDF Get Analytical Report

Abstract

A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W⁻¹) was fabricated by constructing p–n junction of GaN/Ga₂O₃ films.

Keywords:

Responsivity Photodetector Materials science Ultraviolet Optoelectronics p–n junction Semiconductor

Metrics

337

Cited By

8.30

FWCI (Field Weighted Citation Impact)

Refs

0.98

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Construction of GaN/Ga₂O₃ p–n junction for an extremely high responsivity self-powered UV photodetector

Abstract

Metrics

Citation History

Topics

Related Documents

High-temporal dynamic self-powered β-Ga₂O₃/GaN heterojunction ultraviolet photodetector

Ga₂O₃/GaN/Ga₂O₃ N-P-N Double-Junction Ultraviolet Photodetector

High-responsivity dual-band ultraviolet photodetector based on Ga₂O₃/GaN heterostructure

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Ti₃C₂/ϵ-Ga₂O₃Schottky Self-Powered Solar-Blind Photodetector With Robust Responsivity

Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

Abstract

Metrics

Citation History

Topics

Related Documents

High-temporal dynamic self-powered β-Ga2O3/GaN heterojunction ultraviolet photodetector

Ga2O3/GaN/Ga2O3 N-P-N Double-Junction Ultraviolet Photodetector

High-responsivity dual-band ultraviolet photodetector based on Ga2O3/GaN heterostructure

Ag2O/β-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Ti3C2/ϵ-Ga2O3Schottky Self-Powered Solar-Blind Photodetector With Robust Responsivity

Construction of GaN/Ga₂O₃ p–n junction for an extremely high responsivity self-powered UV photodetector

High-temporal dynamic self-powered β-Ga₂O₃/GaN heterojunction ultraviolet photodetector

Ga₂O₃/GaN/Ga₂O₃ N-P-N Double-Junction Ultraviolet Photodetector

High-responsivity dual-band ultraviolet photodetector based on Ga₂O₃/GaN heterostructure

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Ti₃C₂/ϵ-Ga₂O₃Schottky Self-Powered Solar-Blind Photodetector With Robust Responsivity