Facile fabrication of flexible graphene FETs by sunlight reduction of graphene oxide

Abstract

We reported here a facile fabrication of flexible graphene-based field effect transistors (FETs) by sunlight reduction of graphene oxide (GO) as channel material. As a mask-free and chemical-free method, sunlight photoreduction of GO without the use of any complex equipments is simple and green. The resultant FET demonstrated excellent electrical properties (e.g., an optimized I_on/I_off ratio of 111, hole mobility of 0.17 cm² V^-1 s^-1), revealing great potential for development of flexible microelectrics. Additionally, since the reduced GO channel could be fabricated by sunlight treatment between two pre-patterned electrodes, the process features post-fabrication capability, which makes it possible to integrate graphene-based devices with given device structures.