Influence of zinc precursor concentration on properties zinc sulphide thin films using spray pyrolysis technique

Abstract

Stoichiometric high transparent n-zinc sulphide thin films were prepared using chemical spray pyrolysis technique. The concentration of the cationic precursor played a major role to obtain stoichiometry, regardless of various deposition parameters. Zinc sulphide films deposited at 450˚C for the ratio 0.33:1 (Zn:S) resulted in well oriented, stoichiometric polycrystalline cubic structure. The variation in crystallite size associated with the cationic precursor concentration provides significant control over the structural, optical and electrical properties of the films. The optical band gap and activation energy of stoichiometric ZnS films were found to be 3.54 ± 0.02eV and 0.82 ± 0.05eV, respectively. The absorption coefficient of the films was found to be 102 cm−1.