Low temperature ohmic contact for p-type GaN using Mg electrodes

Abstract

A low temperature Ohmic contact for highly doped pGaN has been demonstrated with Mg electrodes. A Φ _Bp of 0.47 eV with ρ _c of 3.4×10 ^-2 Ωcm ² has been extracted by electrical measurements with the TFE model. Considering the WF of the electrodes, the presence of a large potential shift near the interface to reduce the Φ _Bp can be suggested. The results give lots of insights on the Ohmic contact for pGaN.